Current-Line Oriented Pore Formation in n-InP Anodized in KOH

被引：6
|
作者：
Quill, N. [1 ,2 ]
Lynch, R. P. [1 ,2 ]
O'Dwyer, C. [3 ,4 ]
Buckley, D. N. [1 ,2 ]
机构：
[1] Univ Limerick, Dept Phys & Energy, Limerick, Ireland
[2] Univ Limerick, Mat & Surface Sci Inst, Limerick, Ireland
[3] Univ Coll Cork, Dept Chem, Appl Nanosci Grp, Cork, Ireland
[4] Tyndall Natl Inst, Micro & Nanoelect Ctr, Cork, Ireland
来源：
PITS AND PORES 5: A SYMPOSIUM IN HONOR OF DAVID LOCKWOOD | 2013年 / 50卷 / 37期
关键词：
POROUS SILICON FORMATION; FORMATION MECHANISM; ELECTROCHEMICAL FORMATION; CRYSTAL ORIENTATION; GROWTH; ANODIZATION; DEPENDENCE; MORPHOLOGY; INITIATION;
D O I：
10.1149/05037.0143ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Electrochemically formed pores in InP in KOH switch from being crystallographically oriented (CO) to being current-line oriented (CLO) above a specific potential in both 17 mol dm(-3) and 2.5 mol dm(-3) KOH at a temperature of 10 degrees C. The CLO pores formed in KOH have roughly elliptical cross sections, and are wider along the < 01 (1) over bar > than along the perpendicular < 011 > direction. The pores can form only when a critical porosity is reached and their formation marks the transition from porous to planar etching. Many of the features of pore formation are explained by evoking the effect that both temperature and electrolyte concentration can have on the effective diffusion length of holes at the semiconductor-solution interface.
引用
收藏
页码：143 / 153
页数：11
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