Resonant Raman scattering by interface phonons in type II GaAs/AlAs superlattices

被引：1
|
作者：
Sayari, A
Mlayah, A
Maaref, M
Charfi, FF
Carles, R
Planel, R
机构：
[1] UNIV TOULOUSE 3,PHYS SOLIDES LAB,F-31062 TOULOUSE,FRANCE
[2] CTR NATL ETUD TELECOMMUN,CNRS,MICROSTRUCT & MICROELECT LAB,F-92225 BAGNEUX,FRANCE
来源：
SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 06期
关键词：
D O I：
10.1016/S0038-1098(97)00331-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, we present resonant Raman scattering experiments on type II GaAs/AlAs superlattices of short period. Doubly resonant Raman scattering processes of symmetric and antisymmetric interface modes are specified and discussed within disorder effects. Evolution of the interface mode frequencies and the shape of Raman peaks vs AlAs layer widths are studied. The selection rule of symmetric and antisymmetric interface modes is established. Finally, lateral extends of in-plane micro-roughnesses are estimated. (C) 1997 Published by Elsevier Science Ltd.
引用
收藏
页码：361 / 365
页数：5
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