Resonant Raman scattering by interface phonons in type II GaAs/AlAs superlattices

被引：1
|
作者：
Sayari, A
Mlayah, A
Maaref, M
Charfi, FF
Carles, R
Planel, R
机构：
[1] UNIV TOULOUSE 3,PHYS SOLIDES LAB,F-31062 TOULOUSE,FRANCE
[2] CTR NATL ETUD TELECOMMUN,CNRS,MICROSTRUCT & MICROELECT LAB,F-92225 BAGNEUX,FRANCE
来源：
SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 06期
关键词：
D O I：
10.1016/S0038-1098(97)00331-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, we present resonant Raman scattering experiments on type II GaAs/AlAs superlattices of short period. Doubly resonant Raman scattering processes of symmetric and antisymmetric interface modes are specified and discussed within disorder effects. Evolution of the interface mode frequencies and the shape of Raman peaks vs AlAs layer widths are studied. The selection rule of symmetric and antisymmetric interface modes is established. Finally, lateral extends of in-plane micro-roughnesses are estimated. (C) 1997 Published by Elsevier Science Ltd.
引用
收藏
页码：361 / 365
页数：5
相关论文
共 50 条
  • [21] RESONANCE RAMAN-SCATTERING BY CONFINED LO AND TO PHONONS IN GAAS-ALAS SUPERLATTICES - COMMENT
    JUSSERAND, B
    PAQUET, D
    [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (16) : 1752 - 1752
  • [22] RESONANT RAMAN-SCATTERING IN [111] GAAS/ALAS SHORT-PERIOD SUPERLATTICES
    CALLE, F
    MOWBRAY, DJ
    NILES, DW
    CARDONA, M
    CALLEJA, JM
    PLOOG, K
    [J]. PHYSICAL REVIEW B, 1991, 43 (11): : 9152 - 9157
  • [23] TUNNELING EFFECTS UPON RESONANT-RAMAN-SCATTERING INTENSITIES IN GAAS/ALAS SUPERLATTICES
    SHIELDS, AJ
    CARDONA, M
    GRAHN, HT
    PLOOG, K
    [J]. PHYSICAL REVIEW B, 1993, 47 (20): : 13922 - 13925
  • [24] Resonant Raman scattering from phonons in GaAs/(GaAs)(m)(AlAs)(n) quantum wire structures
    Maciel, AC
    Freyland, JM
    Rota, L
    Kiener, C
    Ryan, JF
    Marti, U
    Martin, D
    MorierGemoud, F
    Reinhart, FK
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (11) : 1519 - 1521
  • [25] RESONANT RAMAN-SCATTERING FROM CONFINED PHONONS AND INTERFACE PHONONS IN A GAAS/GAALAS SUPERLATTICE
    MACIEL, AC
    CRUZ, LCC
    RYAN, JF
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (20): : 3041 - 3046
  • [26] ANISOTROPY OF OPTICAL PHONONS AND INTERFACE MODES IN GAAS-ALAS SUPERLATTICES
    REN, SF
    CHU, HY
    CHANG, YC
    [J]. PHYSICAL REVIEW B, 1988, 37 (15): : 8899 - 8911
  • [27] Γ to Xz electron transfer times in type-II GaAs/AlAs superlattices due to emission of confined and interface phonons
    Weber, G
    De Paula, AM
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (02) : 249 - 252
  • [28] Grating-coupler excited interface phonons in GaAs/AlAs superlattices
    Milekhin, AG
    Rösch, M
    Batke, E
    Köhler, K
    Ganser, P
    [J]. SOLID STATE COMMUNICATIONS, 1999, 112 (07) : 387 - 390
  • [29] RAMAN-SCATTERING FROM CONFINED LO PHONONS AND DISPERSION-RELATION IN GAAS/ALAS SUPERLATTICES
    ZHANG, SL
    KLEIN, MV
    KLEM, J
    MORKOC, H
    [J]. PHYSICS LETTERS A, 1988, 131 (01) : 69 - 72
  • [30] RAMAN-SCATTERING FROM FOLDED ACOUSTIC PHONONS AND PHOTOLUMINESCENCE IN MULTILAYER GAAS-ALAS SUPERLATTICES
    LOCKWOOD, DJ
    DEVINE, RLS
    RODRIGUEZ, A
    MENDIALDUA, J
    ROUHANI, BD
    DOBRZYNSKI, L
    [J]. PHYSICAL REVIEW B, 1993, 47 (20): : 13553 - 13560
12345