RAMAN-SCATTERING BY LO PHONONS IN GAAS/ALAS SUPERLATTICES WITH ULTRATHIN ALAS LAYERS

被引：0
|
作者：
GAISLER, VA
TENNE, DA
GOVOROV, AO
BAKAROV, AK
TOROPOV, AI
SHEBANIN, AP
机构：
来源：
JETP LETTERS | 1993年 / 57卷 / 04期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A study of Raman scattering by longitudinal optical phonons in GaAs/AlAs superlattices with ultrathin AlAs layers has made it possible to observe scattering by odd and even localized LO phonons simultaneously. An explanation for this result is proposed: a mechanism of Raman scattering due to defects.
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页码：231 / 234
页数：4
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