RAMAN-SCATTERING BY LO PHONONS IN (GAAS)N1/(ALAS)N2 ULTRATHIN-LAYER SUPERLATTICES

被引：6
|
作者：
WANG, ZP
HAN, HX
LI, GH
JIANG, DS
PLOOG, K
机构：
[1] ACAD SINICA,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA
[2] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
来源：
PHYSICAL REVIEW B | 1991年 / 43卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.43.12650
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Raman spectra of (GaAs)n1/(AlAs)n2 ultrathin-layer superlattices were measured at room temperature and under off-resonance conditions. The experimental results show that there are two effects in ultrathin-layer superlattices: the confinement effect of LO phonons and the alloy effect. It is found that the relative intensity of the disorder-activated TO mode can give a measure of the alloy effect. The Raman spectra of one-monolayer superlattices measured in various scattering configurations are very similar to those of the Al0.5Ga0.5As alloy, and thus the alloy effect is prominent. However, in the case of monolayer number n greater-than-or-equal-to 4, the confined effect is prominent, while the alloy effect is only shown as an interface effect.
引用
收藏
页码：12650 / 12653
页数：4
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