INTERFACE PHONONS IN GAAS ALAS SUPERLATTICES STUDIED BY MICRO-RAMAN SPECTROSCOPY

被引：39
|
作者：
HUBER, A [1 ]
EGELER, T [1 ]
ETTMULLER, W [1 ]
ROTHFRITZ, H [1 ]
TRANKLE, G [1 ]
ABSTREITER, G [1 ]
机构：
[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 9卷 / 03期
关键词：
5;
D O I：
10.1016/0749-6036(91)90248-P
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In GaAs/AlAs superlattices there exist so-called interface phonons with frequencies in between those of the bulk TO and LO phonon modes. Using micro-Raman spectroscopy we were able to study the energy dispersion of these interface phonons as a function of the in-plane momentum transfer qII (0≤qII≤8×105 cm-1). The results are compared to calculations based on the dielectric continuum model. © 1991.
引用
收藏
页码：309 / 311
页数：3
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