Study of InGaN/GaN Multiple Quantum Well Solar Cells With Different Barrier Thicknesses

InGaN/GaN multiple quantum well solar cells (MQW-SCs) with different barrier thicknesses are investigated. By comparing both the material property and device performance, it is demonstrated within our study that thinner barrier thickness in MQW-SCs favors the transport of photogenerated carriers, but may be also accompanied by larger leakage current. An optimal trade-off depends on the suitable barrier thickness. In addition, it also indicates that inadequate p-type doping and unique polarization field have detrimental effects on carrier collection.