Study of InGaN/GaN Multiple Quantum Well Solar Cells With Different Barrier Thicknesses

被引：8
|
作者：
Cai, Xiaomei M. [1 ]
Lv, Xueqin Q. [2 ]
Huang, Xiaojing J. [1 ]
Wang, Xiulin L. [1 ]
Wang, Minshuai S. [1 ]
Yang, Lan [1 ]
Zhu, Huili L. [1 ]
Zhang, Baoping P. [3 ]
机构：
[1] Jimei Univ, Dept Phys, Xiamen, Fujian, Peoples R China
[2] Xiamen Univ, MEMS Res Ctr, Xiamen, Fujian, Peoples R China
[3] Xiamen Univ, Dept Elect Engn, Lab Micro Nano Optoelect, Xiamen, Fujian, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2018年 / 215卷 / 10期
基金：
中国国家自然科学基金;
关键词：
barriers; GaN; InGaN; multiple quantum wells; solar cells; V-DEFECTS; FILMS;
D O I：
10.1002/pssa.201700581
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InGaN/GaN multiple quantum well solar cells (MQW-SCs) with different barrier thicknesses are investigated. By comparing both the material property and device performance, it is demonstrated within our study that thinner barrier thickness in MQW-SCs favors the transport of photogenerated carriers, but may be also accompanied by larger leakage current. An optimal trade-off depends on the suitable barrier thickness. In addition, it also indicates that inadequate p-type doping and unique polarization field have detrimental effects on carrier collection.
引用
收藏
页数：5
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