Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells

被引：31
|
作者：
Choi, Sang-Bae [1 ]
Shim, Jae-Phil [1 ]
Kim, Dong-Min [1 ]
Jeong, Hoon-Il [1 ]
Jho, Young-Dahl [1 ]
Song, Young-Ho [2 ]
Lee, Dong-Seon [1 ]
机构：
[1] Gwangju Inst Sci & Technol GIST, Sch Informat & Commun, Kwangju 500712, South Korea
[2] Korea Photon Technol Inst, Kwangju 500779, South Korea
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期
关键词：
ELECTRIC-FIELD;
D O I：
10.1063/1.4813623
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of indium composition on carrier escape was studied considering recombination in InGaN/GaN multiple quantum well solar cells with indium compositions of 17% and 25%. Competition between tunneling and recombination turned out to act as a crucial role for the short-circuit current density (J(sc)) and fill factor (FF). To enhance the J(sc) and the FF, the tunneling-dominant carrier decay rather than recombination is required in the operating range of the solar cells which is possible by optimizing the band structures for a shorter tunneling time and by improving the crystalline quality for a longer recombination time. (C) 2013 AIP Publishing LLC.
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页数：4
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