Study of InGaN/GaN Multiple Quantum Well Solar Cells With Different Barrier Thicknesses

被引：8

作者：

Cai, Xiaomei M. ^{[1
]}

Lv, Xueqin Q. ^{[2
]}

Huang, Xiaojing J. ^{[1
]}

Wang, Xiulin L. ^{[1
]}

Wang, Minshuai S. ^{[1
]}

Yang, Lan ^{[1
]}

Zhu, Huili L. ^{[1
]}

Zhang, Baoping P. ^{[3
]}

机构：

[1] Jimei Univ, Dept Phys, Xiamen, Fujian, Peoples R China

[2] Xiamen Univ, MEMS Res Ctr, Xiamen, Fujian, Peoples R China

[3] Xiamen Univ, Dept Elect Engn, Lab Micro Nano Optoelect, Xiamen, Fujian, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2018年 / 215卷 / 10期

基金：

中国国家自然科学基金;

关键词：

barriers; GaN; InGaN; multiple quantum wells; solar cells; V-DEFECTS; FILMS;

D O I：

10.1002/pssa.201700581

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaN/GaN multiple quantum well solar cells (MQW-SCs) with different barrier thicknesses are investigated. By comparing both the material property and device performance, it is demonstrated within our study that thinner barrier thickness in MQW-SCs favors the transport of photogenerated carriers, but may be also accompanied by larger leakage current. An optimal trade-off depends on the suitable barrier thickness. In addition, it also indicates that inadequate p-type doping and unique polarization field have detrimental effects on carrier collection.

引用

页数：5

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