Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells

被引：23

作者：

Valdueza-Felip, Sirona ^{[1
]}

Mukhtarova, Anna ^{[1
]}

Pan, Qing ^{[1
]}

Altamura, Giovanni ^{[1
]}

Grenet, Louis ^{[2
]}

Durand, Christophe ^{[1
]}

Bougerol, Catherine ^{[3
]}

Peyrade, David ^{[4
]}

Gonzalez-Posada, Fernando ^{[1
]}

Eymery, Joel ^{[1
]}

Monroy, Eva ^{[1
]}

机构：

[1] CEA Grenoble, INAC SP2M NPSC, F-38054 Grenoble, France

[2] CEA Grenoble, LITEN, F-38054 Grenoble, France

[3] CNRS, Inst Neel, F-38042 Grenoble, France

[4] CEA LETI, LTM CNRS, F-38054 Grenoble, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期

关键词：

D O I：

10.7567/JJAP.52.08JH05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and photovoltaic characterization of In0.12Ga0.88N/GaN multi-quantum-well (MQW) solar cells grown by metalorganic vapor phase epitaxy on (0001) sapphire substrates. Increasing the number of MQWs in the active region from 5 to 30 improves a factor of 10 the peak external quantum efficiency of the device at the price of a slight reduction and increase of the shunt and series resistance, respectively. Solar cells with 30 MQWs exhibit an external quantum efficiency of 38% at 380 nm, an open circuit voltage of 2.0 V, a short circuit current density of 0.23 mA/cm(2) and a fill factor of 59% under 1 sun of AM1.5G-equivalent solar illumination. Solar cells with the grid spacing of the top p-contact varying from 100 to 200 mu m present the same device performance in terms of spectral response and conversion efficiency. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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Bougerol, Catherine
Peyrade, David
González-Posada, Fernando
Eymery, Joel
Monroy, Eva
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