Single crystal growth of 3C-SiC on 15R-SiC

被引：0

作者：

Nakamura, S ^{[1
]}

Hatayama, T ^{[1
]}

Nishino, K ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

COMPOUND SEMICONDUCTORS 1998 | 1999年 / 162期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Single crystalline 3C-SiC has been grown on 15R-SiC substrates up to 60 mum of thickness. A single domain region with a size of more than 2 mm x 2 mm was obtained. The full width at half maximum in X-ray theta - 2theta method was 20 see. In low-temperature photoluminescence of grown layer, sharp peaks near the band edge are dominant and free exciton peaks were observed up to 130 K. This suggests high purity of the 3C-SiC epilayer on 15R-SiC.

引用

页码：717 / 722

页数：6

共 50 条

[1] Study of the 3C-SiC layers grown on the 15R-SiC substrates
Lebedev, A. A.
Abramov, P. L.
Bogdanova, E. V.
Zubrilov, A. S.
Lebedev, S. P.
Nelson, D. K.
Seredova, N. V.
Smirnov, A. N.
Tregubova, A. S.
[J]. SEMICONDUCTORS, 2009, 43 (06) : 756 - 759
[2] Study of the 3C-SiC layers grown on the 15R-SiC substrates
A. A. Lebedev
P. L. Abramov
E. V. Bogdanova
A. S. Zubrilov
S. P. Lebedev
D. K. Nelson
N. V. Seredova
A. N. Smirnov
A. S. Tregubova
[J]. Semiconductors, 2009, 43 : 756 - 759
[3] Low Temperature near band gap photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC heterostructures
Lebedev, A. A.
Abramov, P. L.
Bogdanova, E. V.
Davydov, S. Yu.
Lebedev, S. P.
Nelson, D. K.
Oganesyan, G. A.
Razbirin, B. S.
Tregubova, A. S.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 259 - 262
[4] Crystal growth of 15R-SiC and various polytype substrates
Nishiguchi, T
Shimizu, T
Sasaki, M
Ohshima, S
Nishino, S
[J]. SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 69 - 72
[5] Crystal growth of 15R-SiC boules by sublimation method
Nishiguchi, T
Okada, S
Sasaki, M
Harima, H
Nishino, S
[J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 115 - 118
[6] 4H-SiC single crystal ingots grown on 6H-SiC and 15R-SiC seeds
Maltsev, AA
Maksimov, AY
Yushin, NK
[J]. SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 41 - 44
[7] Controlled growth of 15R-SiC single crystals by the modified Lely method
Schulze, N
Barrett, D
Pensl, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 178 (02): : 645 - 650
[8] Prospects for 3C-SiC bulk crystal growth
Chaussende, D.
Mercier, F.
Boulle, A.
Conchon, F.
Soueidan, M.
Ferro, G.
Mantzari, A.
Andreadou, A.
Polychroniadis, E. K.
Balloud, C.
Juillaguet, S.
Camassel, J.
Pons, M.
[J]. JOURNAL OF CRYSTAL GROWTH, 2008, 310 (05) : 976 - 981
[9] Controlled growth of bulk 15R-SiC single crystals by the modified Lely method
Schulze, N
Barrett, D
Weidner, M
Pensl, G
[J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 111 - 114
[10] Controlled growth of bulk 15R-SiC single crystals by the modified Lely method
[J]. Schulze, Norbert, 2000, Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland (338)

← 1 2 3 4 5 →