4H-SiC single crystal ingots grown on 6H-SiC and 15R-SiC seeds

In this paper, growth of bulk monocrystalline 4H-SiC ingots on 6H-SiC and 15R-SiC substrates using a sublimation method has been reported. The growth mechanism of the 4H-SLC material including transformation stage is discussed The polytype of the grown bulk crystals was determined by low temperature photo-luminescence and X-ray diffraction methods. 4H-SiC wafers prepared from these 4H-SiC ingots had the polytype homogeneity better than 95%, the n-type conductivity with donor concentration (3-30)10(18) cm(-3), the value of specific resistivity 0.01-0.1 Omega cm, and the density of dislocations less than 10(4) cm(-2).