Single crystal growth of 3C-SiC on 15R-SiC

被引：0

作者：

Nakamura, S ^{[1
]}

Hatayama, T ^{[1
]}

Nishino, K ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

COMPOUND SEMICONDUCTORS 1998 | 1999年 / 162期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Single crystalline 3C-SiC has been grown on 15R-SiC substrates up to 60 mum of thickness. A single domain region with a size of more than 2 mm x 2 mm was obtained. The full width at half maximum in X-ray theta - 2theta method was 20 see. In low-temperature photoluminescence of grown layer, sharp peaks near the band edge are dominant and free exciton peaks were observed up to 130 K. This suggests high purity of the 3C-SiC epilayer on 15R-SiC.

引用

页码：717 / 722

页数：6

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