Study of the 3C-SiC layers grown on the 15R-SiC substrates

被引：3

作者：

Lebedev, A. A. ^{[1
]}

Abramov, P. L. ^{[1
]}

Bogdanova, E. V. ^{[1
]}

Zubrilov, A. S. ^{[1
]}

Lebedev, S. P. ^{[1
]}

Nelson, D. K. ^{[1
]}

Seredova, N. V. ^{[1
]}

Smirnov, A. N. ^{[1
]}

Tregubova, A. S. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2009年 / 43卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

61.66.Fn; 61.72.Mm; 68.55.Jk; 73.61.Le; 78.30.Hv;

D O I：

10.1134/S106378260906013X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The 3C-SiC layers grown on the 15R-SiC substrates by sublimation epitaxy in vacuum are studied. Using X-ray topography and Raman spectroscopy, it is shown that the obtained layers are of a rather high structural quality. By the data of the Raman spectroscopy and capacitance-voltage measurements, it is established that the electron concentration in the 3C-SiC layer is (4-6) x 10(18) cm(-3).

引用

页码：756 / 759

页数：4

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