Impact of Nonlinear MOS Capacitance Effect on Transient Analysis of Interposer Through-Silicon Vias

被引：0
|
作者：
Zheng, J. [1 ]
Gao, X. [1 ]
Zhao, W. -S. [1 ]
Wang, G. [1 ]
机构：
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Microelect CAD Ctr, Key Lab RF Circuits & Syst,Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China
来源：
2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS) | 2016年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the equivalent circuit model of a pair of TSVs in a passive interposer base is developed, with the nonlinear MOS capacitance effect treated appropriately. Based on the circuit model, the transient analysis of the interposer TSVs is carried out. The results would be helpful for the design and practical applications of interposer-based 2.5-D IC systems.
引用
收藏
页码：2160 / 2163
页数：4
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