1.3μm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology

被引：0
|
作者：
Hazan, Joel [1 ]
Andreou, Stefanos [2 ]
Pustakhod, Dzmitry [1 ]
Kleijn, Steven [2 ]
Williams, Kevin [1 ]
Bente, Erwin [1 ]
机构：
[1] Eindhoven Univ Technol, IPI Photon Integrat Res Inst, NL-5600 MB Eindhoven, Netherlands
[2] Smart Photon, High Tech Campus 29, NL-5656 AE Eindhoven, Netherlands
来源：
27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021) | 2021年
基金：
荷兰研究理事会;
关键词：
GAIN;
D O I：
10.1109/ISLC51662.2021.9615686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present our latest results on 1300 nm band optical amplifiers and Fabry-Perot lasers in the development of a 1300nm active\passive photonic integration platform on InP. Modal gain, material transparency, temperature dependence are reported and analyzed for amplifiers that are optimized for low butt-joint reflections.
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页数：2
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