ON SPOT SIZES OF 1.3-1.55-MU-M INGAASP/INP SEMICONDUCTOR-LASER DIODES

被引：1
|
作者：
GHAFOORISHIRAZ, H
机构：
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1988年 / 1卷 / 06期
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D O I：
10.1002/mop.4650010609
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：214 / 216
页数：3
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