ON SPOT SIZES OF 1.3-1.55-MU-M INGAASP/INP SEMICONDUCTOR-LASER DIODES

被引：1
|
作者：
GHAFOORISHIRAZ, H
机构：
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1988年 / 1卷 / 06期
关键词：
D O I：
10.1002/mop.4650010609
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：214 / 216
页数：3
相关论文
共 50 条
  • [21] High performance 1.3 mu m and 1.55 mu m InGaAsP/InP strained layer quantum well lasers grown by LP-MOCVD
    Ma, XY
    Wang, ST
    Xiong, FK
    Guo, L
    Wang, ZM
    Wang, LM
    Zhang, XY
    Sun, GX
    Xia, CH
    Zhu, T
    Yang, YL
    Zhang, HQ
    He, GP
    Yao, SQ
    Bi, KK
    Chen, LH
    INTEGRATED OPTOELECTRONICS, 1996, 2891 : 34 - 39
  • [22] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER EMITTING AT 1.55 MU-M
    TAKAHASHI, S
    SAITO, H
    IWANE, G
    ELECTRONICS LETTERS, 1980, 16 (24) : 922 - 923
  • [23] Low-cost 1.55-mu m InGaAsP-InP spot size converted (SSC) laser with conventional active layers
    Fang, RY
    Bertone, D
    Meliga, M
    Montrosset, I
    Oliveti, G
    Paoletti, R
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (08) : 1084 - 1086
  • [24] VAPOR-GROWN 1.3 MU-M INGAASP-INP AVALANCHE PHOTO-DIODES
    OLSEN, GH
    KRESSEL, H
    ELECTRONICS LETTERS, 1979, 15 (05) : 141 - 142
  • [25] 1.3 mu m laser diodes with spot-size converter for access networks
    Yamamoto, M
    Itaya, Y
    Sugie, T
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 376 - 379
  • [26] Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser
    柯青
    谭少阳
    刘松涛
    陆丹
    张瑞康
    王圩
    吉晨
    Journal of Semiconductors, 2015, 36 (09) : 93 - 96
  • [27] 1.55-MU-M INGAASP/INP LASER BURIED IN A HIGH-RESISTIVITY EPITAXIAL LAYER ON A SEMIINSULATING INP SUBSTRATE
    SAKAI, Y
    ITAYA, Y
    MATSUMOTO, S
    FUKUDA, M
    YAMAMOTO, M
    ELECTRONICS LETTERS, 1994, 30 (18) : 1481 - 1482
  • [28] WAVELENGTH DEPENDENCE OF T0 IN INGAASP SEMICONDUCTOR-LASER DIODES
    OGORMAN, J
    LEVI, AFJ
    APPLIED PHYSICS LETTERS, 1993, 62 (17) : 2009 - 2011
  • [29] HIGH-POWER SEMICONDUCTOR-LASER INJECTION-LOCKING AT 1.3 MU-M
    ANDREKSON, PA
    OLSSON, NA
    TANBUNEK, T
    WASHINGTON, MA
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1992, 10 (07) : 903 - 907
  • [30] INTERNAL LOSS OF INGAASP-INP BURIED CRESCENT (LAMDA = 1.3 MU-M) LASER
    HIGUCHI, H
    NAMIZAKI, H
    OOMURA, E
    HIRANO, R
    SAKAKIBARA, Y
    SUSAKI, W
    FUJIKAWA, K
    APPLIED PHYSICS LETTERS, 1982, 41 (04) : 320 - 321
12345