1.3μm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology

被引：0

作者：

Hazan, Joel ^{[1
]}

Andreou, Stefanos ^{[2
]}

Pustakhod, Dzmitry ^{[1
]}

Kleijn, Steven ^{[2
]}

Williams, Kevin ^{[1
]}

Bente, Erwin ^{[1
]}

机构：

[1] Eindhoven Univ Technol, IPI Photon Integrat Res Inst, NL-5600 MB Eindhoven, Netherlands

[2] Smart Photon, High Tech Campus 29, NL-5656 AE Eindhoven, Netherlands

来源：

27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021) | 2021年

基金：

荷兰研究理事会;

关键词：

GAIN;

D O I：

10.1109/ISLC51662.2021.9615686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present our latest results on 1300 nm band optical amplifiers and Fabry-Perot lasers in the development of a 1300nm active\passive photonic integration platform on InP. Modal gain, material transparency, temperature dependence are reported and analyzed for amplifiers that are optimized for low butt-joint reflections.

引用

页数：2

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