New Lithography Technology for Sub-10nm Patterning with Shrinking Organic Material

被引：1
|
作者：
Morita, Seiji [1 ]
机构：
[1] Toshiba Co Ltd, Semicond & Storage Prod Co, Ctr Semicond Res & Dev, Lithog Proc Dev Grp 2,Lithog Proc Technol Dept,Sa, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128583, Japan
来源：
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES VI | 2014年 / 9049卷
关键词：
Lithography; Shrinkage; Polymer template; UV resin; Organic material; Replication;
D O I：
10.1117/12.2046307
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
For making sub-10nm patterns, new lithography technology is proposed in this paper. This is a cost-effective new lithography process using the special organic material which is able to reduce a pattern size by shrinking. Shrinking ratio of various methods, decreasing line edge roughness (LER) and patterning of less than 10nm half pitch size are reported.
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页数：7
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