Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon

被引：5
|
作者：
Giannazzo, F
Goghero, D
Raineri, V
Mirabella, S
Priolo, F
Liotta, SF
Rinaudo, S
机构：
[1] INFM, I-95123 Catania, Italy
[2] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy
[3] CNR, IMM, I-95121 Catania, Italy
[4] STMicroelect, I-95121 Catania, Italy
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期
关键词：
D O I：
10.1116/1.1622671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scanning capacitance microscopy (SCM) has been performed both in cross-sectional and in angle-beveling configurations on ultranarrow B spikes with a full width at the half maximum smaller than the SCM probe diameter. A relevant improvement in the SCM response has been observed passing from the cross section to ten times magnification, but a peculiar asymmetric shape characterizes all the profiles on the beveling configuration and broadening and peak lowering are observed for the narrowest spikes. Accurate two-dimensional simulations allowed us to reproduce the experimentally observed peculiar phenomena. (C) 2004 American Vacuum Society.
引用
收藏
页码：394 / 398
页数：5
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