Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n+-p samples

被引：20
|
作者：
Ciampolini, L
Giannazzo, F
Ciappa, M
Fichtner, W
Raineri, V
机构：
[1] ETH Zentrum, Integrated Syst Lab, Swiss Fed Inst Technol, CH-8092 Zurich, Switzerland
[2] Univ Catania, INFM, I-95124 Catania, Italy
[3] Univ Catania, Dipartimento Fis, I-95124 Catania, Italy
[4] CNR, IMETEM, Catania, Italy
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期
关键词：
SCM; device simulation; carrier spilling; dopant profiling techniques;
D O I：
10.1016/S1369-8001(00)00169-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we compare simulations of SCM measurements on bevelled and micro-sectioned samples for investigating the impact of the carrier spilling effect. Simulation results are validated by experimental data obtained from dedicated samples calibrated by spreading resistance profiling. We show that 3D-based direct inversion of data measured on micro-sectioned bipolar samples results into a good quantitative agreement with the experimental spreading resistance profile in the area where carrier spilling is negligible. 2D-based simulations of bevelled bipolar samples reproduce qualitatively the measured SCM profiles. These results lead to the conclusion that also in the case of SCM, the lateral resolution in junction delineation can be improved by characterizing bevelled samples. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：85 / 88
页数：4
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