Scanning capacitance microscopy on cross section and bevelled samples

被引：0
|
作者：
Raineri, V
Daroczi, CS
Lombardo, S
Privitera, V
机构：
[1] CNR, IMETEM, I-95121 Catania, Italy
[2] MFA, MTA, H-1525 Budapest 114, Hungary
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Scanning capacitance microscopy (SCM) was performed on p(+)p, p(+)n, pn, n(+)n, n(+)p, and np samples in cross section and bevelled configuration. The bevelling or sectioning sample preparation procedure was found to strongly influence the results of SCM. However, we demonstrate that a significant magnification can be obtained in determining the junction depth by using bevelled samples with respect to cross-sections.
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页码：625 / 628
页数：4
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