Cross-section analysis of electric devices by scanning capacitance microscope

被引：4
|
作者：
Takasaki, Y [1 ]
Yamamoto, T [1 ]
机构：
[1] Toshiba Microelect Co, Reliabil Lab, Kawasaki, Kanagawa, Japan
来源：
MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 6-7期
关键词：
D O I：
10.1016/S0026-2714(99)00135-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carrier influence of semiconductor devices is important as it affects the function of the device. In this experiment, the carrier density distribution in the cross-section of semiconductor device was analyzed by SCM: Scanning Capacitance Microscope which is one of the measuring mode of SPM: Scanning Probe Microscope. This paper describe measurement result of change in carrier density by the gate voltage at p channel area of CMOS device and its efficiency to investigating dopant profile on 16MDRAM cross-section. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：987 / 990
页数：4
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