The role of SiO2 buffer layer in the growth of highly textured LiNbO3 thin film upon SiO2/Si by pulsed laser deposition

Highly c-axis-oriented lithium niobate (LiNbO3) thin films have been grown on Si with optimum thickness of the SiO2 buffer layer by pulsed laser deposition technique. The amorphous SiO2 buffer layer was formed on Si (100) wafer by thermal oxidation method. The crystallinity and c-axis orientation of LiNbO3 films were strongly influenced by the thickness of amorphous SiO2 buffer layers. The optimum thickness of the amorphous SiO2 buffer layer was found to be about 230 nm for the growth of highly c-axis-oriented LiNbO3 films. The achieved films have smooth surface and sharp interface. The prism coupler method indicates that the prepared LiNbO3 films have great potential for optical waveguide device. (C) 2004 Elsevier B.V. All rights reserved.