Highly c-axis oriented LiNbO3 thin film grown on SiO2/Si substrates by pulsed laser deposition

被引：10
|
作者：
Ye, ZZ
He, JH [1 ]
Ye, LF
Zhao, BH
Weng, WC
Lu, HM
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
来源：
MATERIALS LETTERS | 2002年 / 55卷 / 04期
基金：
中国国家自然科学基金;
关键词：
LiNbO3; SiO2/Si substrate; pulsed laser deposition; epitaxial growth;
D O I：
10.1016/S0167-577X(01)00658-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly c-axis oriented LiNbO3 thin film has been deposited on the SiO2/Si substrate by KrF excimer pulsed laser deposition (PLD) technique under optimized conditions of 30-Pa oxygen pressure and 600 degreesC substrate temperature. The amorphous SiO2 buffer layer was coated on the Si (001) wafer by thermal oxidation in situ. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements confirm that the film shows superior crystalline quality and highly c-axis oriented texture. Neither the Li-enriched LiNbO3 target nor a biased electric field was applied during the deposition. (C) 2002 Elsevier Science B.V. All Rights Reserved.
引用
收藏
页码：265 / 268
页数：4
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