Effects of niobium content on electrical and mechanical properties of (Na0.85K0.15)0.5Bi0.5Ti(1-x)Nb x O3 thin films

被引:9
|
作者
Li Xujun [1 ,2 ]
Pan Yong [1 ,2 ]
Gong Yueqiu [1 ,2 ]
Huang Renjie [1 ]
Liao Jiajia [1 ]
Xie Shuhong [1 ,2 ]
Zhou Yichun [1 ,2 ]
Gao Xingsen [3 ]
机构
[1] Xiangtan Univ, Fac Mat Optoelect & Phys, Xiangtan 411105, Peoples R China
[2] Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China
[3] S China Normal Univ, Sch Phys & Telecommun Engn, Inst Adv Mat, Guangzhou 510631, Guangdong, Peoples R China
关键词
FERROELECTRIC PROPERTIES; PHASE-TRANSITION; CERAMICS; BEHAVIOR; STRESS; ENHANCEMENT; DIFFRACTION; BOUNDARY;
D O I
10.1007/s10854-014-1744-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
(Na0.85K0.15)(0.5)Bi0.5Ti(1-x)Nb (x) O-3 (NKBT-N100x) thin films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal-organic decomposition method and annealed in oxygen atmosphere at 750 A degrees C. The effects of niobium concentration on the microstructures, ferroelectric, piezoelectric, leakage current and mechanical properties of the NKBT-N100x (x = 0, 0.01, 0.03, 0.05) thin films have been investigated in detail. The NKBT-3N thin film has the largest remnant polarization (7 mu C/cm(2)) and statistically averaged d (33eff) (140 pm/V), the smallest leakage current, elasticity modulus (102.0 Gpa), hardness (5.1 Gpa) and residual stress (297.0 Mpa). The evaluation of residual stresses of these thin films will offer useful guidelines of safe working condition for their potential application in microelectromechanical system.
引用
收藏
页码:1416 / 1422
页数:7
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