A planar amorphous Si1-xGex separated-absorption-multiplication avalanche photo diode

被引：3
|
作者：
Torres, A
Gutierrez, EA
机构：
[1] INAOE, Z.P. 72000, Puebla
来源：
IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 11期
关键词：
D O I：
10.1109/55.641448
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report a simple innovative and CMOS compatible planar Separated-Absorption-Multiplication (SAM) amorphous Si1-xGex avalanche photo diode (SAMAPD) for short-distance optical-fiber communication systems, The spectral response of this SAMAPD extends up to 0.93 mu m with a bandwidth of 1.9 GHz. Due to its low-temperature process budget it can be post-fabricated in a CMOS wafer, which makes it ideal for building monolithic submicron CMOS fiber optic detector systems.
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页码：568 / 570
页数：3
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