Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

被引：14

作者：

Himwas, C. ^{[1
,2
]}

den Hertog, M. ^{[1
,2
]}

Bellet-Amalric, E. ^{[1
,3
]}

Songmuang, R. ^{[1
,2
]}

Donatini, F. ^{[1
,2
]}

Dang, Le Si ^{[1
,2
]}

Monroy, E. ^{[1
,3
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CNRS, Inst Neel, F-38042 Grenoble 9, France

[3] CEA Grenoble, INAC, SP2M, NPSC, F-38054 Grenoble, France

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 02期

关键词：

GAN; WELLS; DEPENDENCE; DENSITY; ALN;

D O I：

10.1063/1.4887140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the identification of an optimum deposited amount of AlGaN in AlGaN/AlN quantum dot (QD) superlattices grown by molecular-beam epitaxy, which grants maximum luminescence at room temperature by finding a compromise between the designs providing maximum internal quantum efficiency (60%) and maximum QD density (9.0 x 10(11) cm(-2)). The average Al composition in the QDs is estimated at 10.6% +/- 60.8% by combining x-ray diffraction measurements with three-dimensional calculations of the strain distribution. The effect of the variation of the QD height/base-diameter ratio on the interband and intraband optical properties was explored by fitting the experimental data with three-dimensional calculations of the band diagram and quantum confined states. (C) 2014 AIP Publishing LLC.

引用

页数：8

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