Coherence in single photon emission from droplet epitaxy and Stranski-Krastanov quantum dots in the telecom C-band

被引:33
|
作者
Anderson, M. [1 ,2 ]
Mueller, T. [1 ]
Skiba-Szymanska, J. [1 ]
Krysa, A. B. [3 ]
Huwer, J. [1 ]
Stevenson, R. M. [1 ]
Heffernan, J. [4 ]
Ritchie, D. A. [2 ]
Shields, A. J. [1 ]
机构
[1] Toshiba Europe Ltd, Cambridge Res Lab, 208 Sci Pk,Milton Rd, Cambridge CB4 0GZ, England
[2] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
[3] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Epitaxy Facil, Mappin St, Sheffield S1 3JD, S Yorkshire, England
[4] Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England
基金
“创新英国”项目; 英国工程与自然科学研究理事会;
关键词
COMPUTATION;
D O I
10.1063/5.0032128
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ability of two photons to interfere lies at the heart of many photonic quantum networking concepts and requires that the photons are indistinguishable with sufficient coherence times to resolve the interference signals. However, for solid-state quantum light sources, this can be challenging to achieve as they are in constant interaction with noise sources in their environment. Here, we investigate the noise sources that affect InAs/InP quantum dots emitting in the telecom C-band by comparing their behavior on a wetting layer for Stranski-Krastanov grown quantum dots with a nearly wetting layer-free environment achieved with the droplet epitaxy growth mode. We show that the droplet epitaxy growth mode is beneficial for a quiet environment, leading to 96% of exciton transitions having a coherence time longer than the typical detector resolution of 100 ps, even under non-resonant excitation. We also show that the decay profile indicates the presence of slow dephasing processes, which can be compensated for experimentally. We finally conduct Hong-Ou-Mandel interference measurements between subsequently emitted photons and find a corrected two-photon interference visibility of 98.6 +/- 1.6% for droplet-epitaxy grown quantum dots. The understanding of the influence of their surroundings on the quantum optical properties of these emitters is important for their optimization and use in future quantum networking applications.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Single photon emission in the telecom C-band from nanowire-based quantum dots
    Wakileh, Andrew N.
    Yu, Lingxi
    Dokuz, Doga
    Haffouz, Sofiane
    Wu, Xiaohua
    Lapointe, Jean
    Northeast, David B.
    Williams, Robin L.
    Rotenberg, Nir
    Poole, Philip J.
    Dalacu, Dan
    [J]. APPLIED PHYSICS LETTERS, 2024, 124 (04)
  • [2] Single-photon and polarization-entangled photon emission from InAs quantum dots in the telecom C-band
    Olbrich, Fabian
    Hoeschele, Jonatan
    Paul, Matthias
    Kettler, Jan
    Portalupi, Simone L.
    Jetter, Michael
    Michler, Peter
    [J]. NANOPHOTONICS VII, 2018, 10672
  • [3] Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
    Himwas, C.
    Songmuang, R.
    Dang, Le Si
    Bleuse, J.
    Rapenne, L.
    Sarigiannidou, E.
    Monroy, E.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (24)
  • [4] Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy
    Simeonov, D
    Feltin, E
    Carlin, JF
    Butté, R
    Ilegems, M
    Grandjean, N
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [5] Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip
    Mancini, L.
    Moyon, F.
    Houard, J.
    Blum, I.
    Lefebvre, W.
    Vurpillot, F.
    Das, A.
    Monroy, E.
    Rigutti, L.
    [J]. APPLIED PHYSICS LETTERS, 2017, 111 (24)
  • [6] Quantum teleportation using highly coherent emission from telecom C-band quantum dots
    M. Anderson
    T. Müller
    J. Huwer
    J. Skiba-Szymanska
    A. B. Krysa
    R. M. Stevenson
    J. Heffernan
    D. A. Ritchie
    A. J. Shields
    [J]. npj Quantum Information, 6
  • [7] Quantum teleportation using highly coherent emission from telecom C-band quantum dots
    Anderson, M.
    Mueller, T.
    Huwer, J.
    Skiba-Szymanska, J.
    Krysa, A. B.
    Stevenson, R. M.
    Heffernan, J.
    Ritchie, D. A.
    Shields, A. J.
    [J]. NPJ QUANTUM INFORMATION, 2020, 6 (01)
  • [8] Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
    Himwas, C.
    den Hertog, M.
    Bellet-Amalric, E.
    Songmuang, R.
    Donatini, F.
    Dang, Le Si
    Monroy, E.
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 116 (02)
  • [9] Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots
    Gajjela, Raja Sekhar Reddy
    Alzeidan, Ahmad
    Curbelo, Victor M. O.
    Quivy, Alain A.
    Koenraad, Paul M.
    [J]. PHYSICAL REVIEW MATERIALS, 2022, 6 (11)
  • [10] Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy
    Simeonov, D.
    Feltin, E.
    Demangeot, K.
    Pinquier, C.
    Carlin, J. -F.
    Butte, R.
    Frandon, J.
    Grandjean, N.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 299 (02) : 254 - 258