Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

被引：19
|
作者：
Himwas, C. [1 ]
Songmuang, R. [1 ]
Dang, Le Si [1 ]
Bleuse, J. [2 ]
Rapenne, L. [3 ]
Sarigiannidou, E. [3 ]
Monroy, E. [2 ]
机构：
[1] Inst Neel CNRS, CEA CNRS Grp Nanophys & Semicond, F-38042 Grenoble 9, France
[2] CEA Grenoble, INAC SP2M, CEA CNRS Grp Nanophys & Semicond, F-38054 Grenoble 9, France
[3] INP Grenoble Minatec, F-38016 Grenoble, France
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 24期
关键词：
MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GROWTH; GAN; LOCALIZATION; ALLOYS; WELLS;
D O I：
10.1063/1.4770075
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying the composition and geometry of the QDs, the peak emission wavelength can be shifted from 320 nm to 235 nm while keeping the internal quantum efficiency larger than 30%. The efficient carrier confinement is confirmed by the stability of the photoluminescence (PL) intensity and decay time, from low temperature up to 100 K. Above this threshold, the PL intensity decreases and the radiative lifetime increases due to carrier thermalization. We also identified the intraband electronic transition between the ground level of the conduction band and the first excited state confined along the growth axis (s-p(z)). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770075]
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页数：5
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