Temperature-dependent photoluminescence of ZnSe/ZnS quantum dots fabricated under the Stranski-Krastanov mode

被引：27
|
作者：
Kim, YG [1 ]
Joh, YS
Song, JH
Baek, KS
Chang, SK
Sim, ED
机构：
[1] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[2] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305600, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期
关键词：
D O I：
10.1063/1.1612898
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-assembled ZnSe/ZnS quantum dots (QDs) have been grown in the Stranski-Krastanov (S-K) mode using a metalorganic chemical vapor deposition technique under the atomic-layer epitaxy mode. Atomic-force-microscopy measurements on the uncapped ZnSe/ZnS QDs reveal that lens-shaped ZnSe QDs are formed after 1-2 monolayer ZnSe is deposited. The ZnSe QDs are estimated 1-2 nm in height and 25-35 nm in radius. The temperature-dependent behavior of confined carriers in the ZnSe QDs has been investigated through photoluminescence (PL) measurements. PL spectra show a substantial PL linewidth narrowing accompanied by a large redshift of the emission peak energy with increasing temperature. This unusual temperature-dependent behavior is interpreted as the dot-to-dot carrier transfer through the wetting layer, which is common to QDs grown in the S-K mode. (C) 2003 American Institute of Physics.
引用
收藏
页码：2656 / 2658
页数：3
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