Highly Sb-rich Ge-Sb-Te Engineering in 4Kb Phase-Change Memory for High Speed and High Material Stability Under Cycling

被引：11

作者：

Navarro, G. ^{[1
]}

Sabbione, C. ^{[1
]}

Bernard, M. ^{[1
]}

Bourgeois, G. ^{[1
]}

Sandrini, J. ^{[1
]}

Castellani, N. ^{[1
]}

Cueto, O. ^{[1
]}

Garrione, J. ^{[1
]}

Cyrille, M. C. ^{[1
]}

Frei, M. ^{[2
]}

Nistor, L. ^{[3
]}

Bernier, N. ^{[1
]}

Fillot, F. ^{[1
]}

Nolot, E. ^{[1
]}

Socquet-Clerc, C. ^{[1
]}

Magis, T. ^{[1
]}

Laulagnet, F. ^{[1
]}

Pakala, M. ^{[2
]}

Nowak, E. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA LETI, F-38000 Grenoble, France

[2] Appl Mat Inc, Santa Clara, CA 95054 USA

[3] Appl Mat France, F-38190 Bernin, France

来源：

2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) | 2019年

关键词：

D O I：

10.1109/imw.2019.8739656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present the engineering of highly Sb-rich Ge-Sb-Te phase-change materials integrated in state-of-the-art Phase-Change Memory devices in 4Kb arrays. Thanks to an innovative composition called "delta" or delta-GST, high speed performance and high material stability under cycling is achieved in arrays and demonstrated by both physicochemical analysis and electrical characterization. Finally, the origin of the outstanding high speed in our innovative compound is revealed.

引用

页码：91 / 94

页数：4

共 50 条

[21] Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory
Lu, Yegang
Zhang, Zhonghua
Song, Sannian
Shen, Xiang
Wang, Guoxiang
Cheng, Limin
Dai, Shixun
Song, Zhitang
APPLIED PHYSICS LETTERS, 2013, 102 (24)
[22] Theoretical predictions of the structural stability and property contrast for Sb-rich Ge3Sb6Te5 phase-change materials
Su, Jinhao
Zhang, Zhaofu
Wan, Xuhao
Yu, Wei
Wang, Anyang
Zhong, Hongxia
Robertson, John
Guo, Yuzheng
APPLIED PHYSICS LETTERS, 2023, 122 (25)
[23] Potential of Ge-Sb-Te phase-change optical disks for high-data-rate recording
Yamada, N
OPTICAL DATA STORAGE '97, 1997, 3109 : 28 - 37
[24] Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials
Hegedus, J.
Elliott, S. R.
NATURE MATERIALS, 2008, 7 (05) : 399 - 405
[25] Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories
Boniardi, Mattia
Ielmini, Daniele
Tortorelli, Innocenzo
Redaelli, Andrea
Pirovano, Agostino
Allegra, Mario
Magistretti, Michele
Bresolin, Camillo
Erbetta, Davide
Modelli, Alberto
Varesi, Enrico
Pellizzer, Fabio
Lacaita, Andrea L.
Bez, Roberto
SOLID-STATE ELECTRONICS, 2011, 58 (01) : 11 - 16
[26] Ultrafast logic computation using nanostructured Ge-Sb-Te phase-change memory materials
Loke, Desmond
Skelton, Jonathan
Wang, Wei-Jie
Lee, Tae-Hoon
Zhao, Rong
Chong, Tow-Chong
Elliott, Stephen
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2018, 256
[27] Study of Ge-Rich Ge-Sb-Te Device-Dependent Segregation for Industrial Grade Embedded Phase-Change Memory
Petroni, Elisa
Allegra, Mario
Baldo, Matteo
Laurin, Luca
Serafini, Andrea
Favennec, Laurent
Desvoivres, Latifa
Sandrini, Jury
Boccaccio, Christian
Le-Friec, Yannick
Ostrovsky, Alain
Gouraud, Pascal
Bonnevialle, Aurore
Ranica, Rossella
Redaelli, Andrea
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (10):
[28] Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-change memory
Zhou, Xilin
Wu, Liangcai
Song, Zhitang
Rao, Feng
Ren, Kun
Peng, Cheng
Liu, Bo
Yao, Dongning
Feng, Songlin
Chen, Bomy
THIN SOLID FILMS, 2011, 520 (03) : 1155 - 1159
[29] Insight into the Growth and Control of Single-Crystal Layers of Ge-Sb-Te Phase-Change Material
Katmis, Ferhat
Calarco, Raffaella
Perumal, Karthick
Rodenbach, Peter
Giussani, Alessandro
Hanke, Michael
Proessdorf, Andre
Trampert, Achim
Grosse, Frank
Shayduk, Roman
Campion, Richard
Braun, Wolfgang
Riechert, Henning
CRYSTAL GROWTH & DESIGN, 2011, 11 (10) : 4606 - 4610
[30] Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device
Eom, Jae-Hyeon
Yoon, Young-Gui
Park, Changwon
Lee, Hoonkyung
Im, Jino
Suh, Dong-Seok
Noh, Jin-Seo
Khang, Yoonho
Ihm, Jisoon
PHYSICAL REVIEW B, 2006, 73 (21)

← 1 2 3 4 5 →