Highly Sb-rich Ge-Sb-Te Engineering in 4Kb Phase-Change Memory for High Speed and High Material Stability Under Cycling

被引：11

作者：

Navarro, G. ^{[1
]}

Sabbione, C. ^{[1
]}

Bernard, M. ^{[1
]}

Bourgeois, G. ^{[1
]}

Sandrini, J. ^{[1
]}

Castellani, N. ^{[1
]}

Cueto, O. ^{[1
]}

Garrione, J. ^{[1
]}

Cyrille, M. C. ^{[1
]}

Frei, M. ^{[2
]}

Nistor, L. ^{[3
]}

Bernier, N. ^{[1
]}

Fillot, F. ^{[1
]}

Nolot, E. ^{[1
]}

Socquet-Clerc, C. ^{[1
]}

Magis, T. ^{[1
]}

Laulagnet, F. ^{[1
]}

Pakala, M. ^{[2
]}

Nowak, E. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA LETI, F-38000 Grenoble, France

[2] Appl Mat Inc, Santa Clara, CA 95054 USA

[3] Appl Mat France, F-38190 Bernin, France

来源：

2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) | 2019年

关键词：

D O I：

10.1109/imw.2019.8739656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present the engineering of highly Sb-rich Ge-Sb-Te phase-change materials integrated in state-of-the-art Phase-Change Memory devices in 4Kb arrays. Thanks to an innovative composition called "delta" or delta-GST, high speed performance and high material stability under cycling is achieved in arrays and demonstrated by both physicochemical analysis and electrical characterization. Finally, the origin of the outstanding high speed in our innovative compound is revealed.

引用

页码：91 / 94

页数：4

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