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- [21] Impact of Gate Asymmetry on Gate-All-Around Silicon Nanovvire Transistor Parasitic Capacitance2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 296 - 298Dong, Xiaoqiao论文数: 0| 引用数: 0| h-index: 0|机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaYang, Yuancheng论文数: 0| 引用数: 0| h-index: 0|机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaChen, Gong论文数: 0| 引用数: 0| h-index: 0|机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaSun, Shuang论文数: 0| 引用数: 0| h-index: 0|机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaCai, Qifeng论文数: 0| 引用数: 0| h-index: 0|机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaLi, Xiaokang论文数: 0| 引用数: 0| h-index: 0|机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaAn, Xia论文数: 0| 引用数: 0| h-index: 0|机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaXu, Xiaoyan论文数: 0| 引用数: 0| h-index: 0|机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaZhang, Wanrong论文数: 0| 引用数: 0| h-index: 0|机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaLi, Ming论文数: 0| 引用数: 0| h-index: 0|机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
- [22] Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (07) : 4029 - 4036Yang, Xiaoqiao论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaLi, Xianglong论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaLiu, Ziyu论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaSun, Yabin论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaLiu, Yun论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaLi, Xiaojin论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaShi, Yanling论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
- [23] Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuitSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (05)Sun, Yabin论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaLi, Xianglong论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhuo, Yue论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaLiu, Yun论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaWang, Teng论文数: 0| 引用数: 0| h-index: 0|机构: Shanghai Inst Space Power Sources, Shanghai 200245, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaLi, Xiaojin论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaShi, Yanling论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaXu, Jun论文数: 0| 引用数: 0| h-index: 0|机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaLiu, Ziyu论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
- [24] A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around TransistorsMICROMACHINES, 2023, 14 (06)Yang, Jingwen论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaHuang, Ziqiang论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaWang, Dawei论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaLiu, Tao论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaSun, Xin论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaQian, Lewen论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaPan, Zhecheng论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaXu, Saisheng论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaWang, Chen论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Shanghai Integrated Circuit Mfg Innovat Ctr Co Ltd, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaWu, Chunlei论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Shanghai Integrated Circuit Mfg Innovat Ctr Co Ltd, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaXu, Min论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Shanghai Integrated Circuit Mfg Innovat Ctr Co Ltd, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaZhang, David Wei论文数: 0| 引用数: 0| h-index: 0|机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Shanghai Integrated Circuit Mfg Innovat Ctr Co Ltd, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
- [25] Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2020,Mochizuki, S.论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAColombeau, B.论文数: 0| 引用数: 0| h-index: 0|机构: Appl Mat Inc, 974 East Argues Ave, Sunnyvale, CA USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAZhang, J.论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAKung, S. C.论文数: 0| 引用数: 0| h-index: 0|机构: Appl Mat Inc, 974 East Argues Ave, Sunnyvale, CA USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAStolfi, M.论文数: 0| 引用数: 0| h-index: 0|机构: Appl Mat Inc, 974 East Argues Ave, Sunnyvale, CA USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAZhou, H.论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USABreton, M.论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAWatanabe, K.论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USALi, J.论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAJagannathan, H.论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USACogorno, M.论文数: 0| 引用数: 0| h-index: 0|机构: Appl Mat Inc, 974 East Argues Ave, Sunnyvale, CA USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAMandrekar, T.论文数: 0| 引用数: 0| h-index: 0|机构: Appl Mat Inc, 974 East Argues Ave, Sunnyvale, CA USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAChen, P.论文数: 0| 引用数: 0| h-index: 0|机构: Appl Mat Inc, 974 East Argues Ave, Sunnyvale, CA USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USALoubet, N.论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USANatarajan, S.论文数: 0| 引用数: 0| h-index: 0|机构: Appl Mat Inc, 974 East Argues Ave, Sunnyvale, CA USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USAHaran, B.论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA IBM Res, 257 Fuller Rd,Suite 3100, Albany, NY 12203 USA
- [26] 3D RRAMs with Gate-All-Around Stacked Nanosheet Transistors for In-Memory-Computing2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020,Barraud, S.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceEzzadeen, M.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, List, CEA, F-38000 Grenoble, France Univ Aix Marseille, IM2NP, CNRS, Marseille, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceBosch, D.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceDubreuil, T.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceCastellani, N.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceMeli, V论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceHartmann, J. M.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceMouhdach, M.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FrancePrevitali, B.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceGiraud, B.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, List, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceNoel, J. P.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, List, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceMolas, G.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FrancePortal, J. M.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Aix Marseille, IM2NP, CNRS, Marseille, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceNowak, E.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, FranceAndrieu, F.论文数: 0| 引用数: 0| h-index: 0|机构: Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France Univ Grenoble Alpes, Leti, CEA, F-38000 Grenoble, France
- [27] Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistorsPHYSICA SCRIPTA, 2020, 95 (06)Mohapatra, E.论文数: 0| 引用数: 0| h-index: 0|机构: Siksha O Anusandhan Deemed Be Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, India Siksha O Anusandhan Deemed Be Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, IndiaDash, T. P.论文数: 0| 引用数: 0| h-index: 0|机构: Siksha O Anusandhan Deemed Be Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, India Siksha O Anusandhan Deemed Be Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, IndiaJena, J.论文数: 0| 引用数: 0| h-index: 0|机构: Siksha O Anusandhan Deemed Be Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, India Siksha O Anusandhan Deemed Be Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, IndiaDas, S.论文数: 0| 引用数: 0| h-index: 0|机构: Silicon Inst Technol, Dept Elect & Commun Engn, Bhubaneswar 751024, India Siksha O Anusandhan Deemed Be Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, IndiaMaiti, C. K.论文数: 0| 引用数: 0| h-index: 0|机构: Soura Niloy, Kailash Ghosh Rd, Kolkata 700008, India Siksha O Anusandhan Deemed Be Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, India
- [28] Thermal Coupling Among Channels and Its DC Modeling in Sub-7-nm Vertically Stacked Nanosheet Gate-All-Around TransistorIEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6563 - 6570Liu, Renhua论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R ChinaLi, Xiaojin论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R ChinaSun, Yabin论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R ChinaLi, Fei论文数: 0| 引用数: 0| h-index: 0|机构: Empyrean Technol Co Ltd, Beijing 100102, Peoples R China East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R ChinaShi, Yanling论文数: 0| 引用数: 0| h-index: 0|机构: East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R China
- [29] Design study of the gate-all-around silicon nanosheet MOSFETsSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (03)Lee, Yongwoo论文数: 0| 引用数: 0| h-index: 0|机构: Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea Kookmin Univ, Sch Elect Engn, Seoul 02707, South KoreaPark, Geon-Hwi论文数: 0| 引用数: 0| h-index: 0|机构: Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea Kookmin Univ, Sch Elect Engn, Seoul 02707, South KoreaChoi, Bongsik论文数: 0| 引用数: 0| h-index: 0|机构: Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea论文数: | 引用数: | h-index: |机构:Kim, Hyo-Jin论文数: 0| 引用数: 0| h-index: 0|机构: Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea Kookmin Univ, Sch Elect Engn, Seoul 02707, South KoreaKim, Dae Hwan论文数: 0| 引用数: 0| h-index: 0|机构: Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea Kookmin Univ, Sch Elect Engn, Seoul 02707, South KoreaKim, Dong Myong论文数: 0| 引用数: 0| h-index: 0|机构: Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea Kookmin Univ, Sch Elect Engn, Seoul 02707, South KoreaKang, Min-Ho论文数: 0| 引用数: 0| h-index: 0|机构: Natl Nanofab Ctr NNFC, Dept Nanoproc, Daejeon 34141, South Korea Kookmin Univ, Sch Elect Engn, Seoul 02707, South KoreaChoi, Sung-Jin论文数: 0| 引用数: 0| h-index: 0|机构: Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea
- [30] A Review of the Gate-All-Around Nanosheet FET Process OpportunitiesELECTRONICS, 2022, 11 (21)Mukesh, Sagarika论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res Albany, Albany, NY 12203 USA IBM Res Albany, Albany, NY 12203 USAZhang, Jingyun论文数: 0| 引用数: 0| h-index: 0|机构: IBM Res Albany, Albany, NY 12203 USA IBM Res Albany, Albany, NY 12203 USA