Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

被引：3

作者：

Cordier, Y.

Chenot, S.

Laugt, M.

Tottereau, O.

Joblot, S.

Semond, F.

Massies, J.

Di Cioccio, L.

Moriceau, H.

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

[2] CEA, LETI, F-38054 Grenoble, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2006年 / 40卷 / 4-6期

关键词：

molecular beam epitaxy; nitrides; high electron mobility transistors;

D O I：

10.1016/j.spmi.2006.06.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) on Si(111)/SiO2/polySoC substrates. The structural, optical, and electrical properties of these films are studied and compared with those of heterostructures grown on thick Si(111) substrates. Field effect transistors have been realized, and they demonstrate the potentialities of III-V nitrides grown on these advanced substrates. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：359 / 362

页数：4

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