Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors

被引：4
|
作者：
Aidam, R. [1 ]
Kirste, L. [1 ]
Kunzer, M. [1 ]
Mueller, S. [1 ]
Waltereit, P. [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期
关键词：
D O I：
10.1002/pssc.200778411
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the plasma-assisted molecular beam epitaxy (PAMBE) of AlGaN/GaN high electron mobility transistors (HEMTS). Growth was performed on MOCVD grown GaN Templates and 4H-SiC(0001) wafers with 3 '' diameter. In a detailed study of GaN growth conditions the growth rate was varied between 0.28 and 0.5 mu m/h. Under optimized conditions, the surface root mean square toughness was less than 0.6 nm. Low temperature PL measurements in the range 1.9 to 3.8 eV showed only the exciton-emission, with a FWHM of 12 meV. AlGaN-HEMT structures on GaN-templates exhibited room temperature Hall mobilities of 1600 cm(2)/Vs and sheet electron concentration of 8 x 10(12) /cm(2). On SiC mobilities of 1220 cm(2)/Vs were achieved. Current-voltage output characteristics of PAMBE grown AlGaN/GaN HEMTs on SiC showed a drain current density about 0.8 A/mm for a gate bias of +1V and only small dispersion. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1902 / 1905
页数：4
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