Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors

被引：36
|
作者：
Katzer, DS
Storm, DF
Binari, SC
Shanabrook, BV
Torabi, A
Zhou, L
Smith, DJ
机构：
[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA
[2] Raytheon RF Components, Andover, MA 01810 USA
[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
[4] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 03期
关键词：
D O I：
10.1116/1.1927103
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe the growth of InAIN/GaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the MAIN growth temperature must be below about 460 degrees C for In to incorporate reliably into the film. Thus far, a thin AIN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAIN/GaN interface. The thin AIN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an MAIN barrier and a thin AIN spacer layer has a sheet resistance of 980 Omega/rectangle with a sheet electron density of 1.96 X 10(13) cm(-2). (c) 2005 American Vacuum Society.
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收藏
页码：1204 / 1208
页数：5
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