Vacuum gate dielectric gate-all-around nanowire for hot carrier injection and bias temperature instability free transistor

被引：23

作者：

Han, Jin-Woo ^{[1
]}

Moon, Dong-Il ^{[2
]}

Oh, Jae Sub ^{[3
]}

Choi, Yang-Kyu ^{[2
]}

Meyyappan, M. ^{[1
]}

机构：

[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA

[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[3] Natl Nanofab Ctr, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 25期

关键词：

MOSFET;

D O I：

10.1063/1.4885595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A gate-all-around (GAA) field effect transistor with vacuum gate dielectric is presented as a structure free from hot-carrier injection and bias temperature instability. A conventional GAA fabrication process is used along with selective removal of the sacrificial gate oxide as an extra process step. The lowered dielectric constant in vacuum gate dielectric can be compensated by the nature of the nanowire and physical oxide thickness reduction. As the nanowire channel is fully surrounded by empty space, reliability issues relevant to the gate dielectric can be completely cleared. (C) 2014 AIP Publishing LLC.

引用

页数：3

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