Increased hot carrier effects in Gate-All-Around SOI nMOSFET's

被引：3
|
作者：
Park, JT
Choi, NJ
Yu, CG
Jeon, SH
Colinge, JP
机构：
[1] Univ Inchon, Dept Elect Engn, Inchon 402749, South Korea
[2] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 9-11期
关键词：
D O I：
10.1016/S0026-2714(03)00254-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Increased device degradation due to hot-electron effects in Gate-All-Around (GAA) SOI nMOSFETs is investigated. The most significant degradation takes place in the parasitic parasitic transistor, which is the weakest region with regard to impact ionization. The condition of V(GS)congruent toV(TH) is shown to be the worst-case device degradation as in FD SOI devices. Degradation rate and dynamic transconductance measurements show that interface state generation is responsible for device degradation. The higher generation rate at the edge of devices is confirmed from the larger degradation observed in multi-finger gate devices. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1427 / 1432
页数：6
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