Injection Current Model Fit in p-Channel Floating Gate MOS Transistors Using the Levenberg-Marquardt Method

被引：0

作者：

Hernandez-Garnica, O. ^{[1
]}

Gomex-Castaneda, F. ^{[1
]}

Moreno-Cadenas, J. A. ^{[1
]}

Flores-Nava, L. M. ^{[1
]}

机构：

[1] CINVESTAV IPN, Dept Elect Engn, Mexico City, DF, Mexico

来源：

2013 10TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE) | 2013年

关键词：

Levenberg-Marquardt; curve fitting; FGMOS; pFGMOS; electron injection; impact ionization; floating gate; MOS;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The Levenberg-Marquardt optimization method is an iterative numerical technique that can be used to deal with the problem of least squares curve fitting. In particular, in this work it is used to fit the parameters involved in a semi-empirical model of the pFGMOS describing the hot-electron injection current. The injection current is a physical mechanism by which the electrical charge on the floating gate in pFGMOS transistors can be modified. This paper describes the use of the Levenberg-Marquardt algorithm for processing measurement data from an experimental pFGMOS cell fabricated in 0.5-micron standard CMOS technology.

引用

页码：482 / 487

页数：6

共 46 条

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