Gallium nitride nanowire probe for near-field scanning microwave microscopy

被引：17
|
作者：
Weber, J. C. [1 ,2 ]
Blanchard, P. T. [1 ]
Sanders, A. W. [1 ]
Imtiaz, A. [1 ]
Wallis, T. M. [1 ]
Coakley, K. J. [1 ]
Bertness, K. A. [1 ]
Kabos, P. [1 ]
Sanford, N. A. [1 ]
Bright, V. M. [2 ]
机构：
[1] NIST, Boulder, CO 80305 USA
[2] Univ Colorado, Boulder, CO 80303 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 02期
关键词：
ATOMIC-FORCE MICROSCOPY; CATALYST-FREE GROWTH; GAN NANOWIRES; ELECTRICAL CHARACTERIZATION; EVANESCENT MICROWAVES; NUCLEATION; GHZ;
D O I：
10.1063/1.4861862
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. A single nanowire was Pt-bonded to a commercial Si cantilever prior to evaporation of a Ti/Al coating to provide a microwave signal pathway. Testing over a microcapacitor calibration sample shows the probe to have capacitance resolution of at least 0.7 fF with improved sensitivity and reduced uncertainty compared with a commercial microwave probe. High wear resistance of the defect-free nanowire enabled it to maintain a tip radius of 150 nm after multiple contact-mode scans while demonstrating nanometer-scale topographical resolution. (C) 2014 AIP Publishing LLC.
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页数：4
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