Gallium nitride nanowire probe for near-field scanning microwave microscopy

被引：17

作者：

Weber, J. C. ^{[1
,2
]}

Blanchard, P. T. ^{[1
]}

Sanders, A. W. ^{[1
]}

Imtiaz, A. ^{[1
]}

Wallis, T. M. ^{[1
]}

Coakley, K. J. ^{[1
]}

Bertness, K. A. ^{[1
]}

Kabos, P. ^{[1
]}

Sanford, N. A. ^{[1
]}

Bright, V. M. ^{[2
]}

机构：

[1] NIST, Boulder, CO 80305 USA

[2] Univ Colorado, Boulder, CO 80303 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 02期

关键词：

ATOMIC-FORCE MICROSCOPY; CATALYST-FREE GROWTH; GAN NANOWIRES; ELECTRICAL CHARACTERIZATION; EVANESCENT MICROWAVES; NUCLEATION; GHZ;

D O I：

10.1063/1.4861862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. A single nanowire was Pt-bonded to a commercial Si cantilever prior to evaporation of a Ti/Al coating to provide a microwave signal pathway. Testing over a microcapacitor calibration sample shows the probe to have capacitance resolution of at least 0.7 fF with improved sensitivity and reduced uncertainty compared with a commercial microwave probe. High wear resistance of the defect-free nanowire enabled it to maintain a tip radius of 150 nm after multiple contact-mode scans while demonstrating nanometer-scale topographical resolution. (C) 2014 AIP Publishing LLC.

引用

页数：4

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