ENHANCEMENT OF EXCITONIC PHOTOLUMINESCENCE IN SILICON-DOPED n+/i-GaAs STRUCTURES

被引：4

作者：

Kazlauskaite, V. ^{[1
]}

Suziedelis, A. ^{[1
]}

Cerskus, A. ^{[1
]}

Gradauskas, J. ^{[1
]}

Asmontas, S. ^{[1
]}

Kundrotas, J. ^{[1
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2009年 / 49卷 / 03期

关键词：

GaAs homojunction; photoliuminescence; exciton; GAAS; SEMICONDUCTORS; DEPENDENCE;

D O I：

10.3952/lithjphys.49307

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present photoluminescence spectra of a molecular beam epitaxy grown GaAs structure consisting of the layer of intrinsic conductivity having 500 nm thickness and capped with silicon-doped 100 nm thick layer. The spectra were measured in the range of 3.6-77 K crystal lattice temperatures and at various laser excitation energies. Possible mechanisms of experimentally observed excitonic line narrowing and intensity enhancement in n(+)/i-GaAs homojunction are discussed.

引用

页码：285 / 290

页数：6

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