CATHODOLUMINESCENCE SPECTROMETRY FOR INSPECTION OF SILICON-DOPED GAAS LIGHT-EMITTING-DIODES

Cathodoluminescence spectrometry is a sensitive method of analysis featuring high spectral and local resolution. A scanning electron microscope was used to determine what analytical information can be obtained from the spectra of, for example, GaAs: Si LEDs and under what conditions. Charge carrier densities of 5 multiplied by (times) 10**1**7 cm** minus **3 to 5 multiplied by (times) 10**1**8 cm** minus **3 were measured in weakly compensated GaAs to within an accuracy of a few percent, while for strongly compensated GaAs it was possible to form an estimate. This technique has proved very practical for the analysis of defect mechanisms in diodes.