CATHODOLUMINESCENCE SPECTROMETRY FOR INSPECTION OF SILICON-DOPED GAAS LIGHT-EMITTING-DIODES

被引：0
|
作者：
KNAUER, U [1 ]
WOLFGANG, E [1 ]
机构：
[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNICH 80,FED REP GER
来源：
SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS | 1977年 / 6卷 / 04期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cathodoluminescence spectrometry is a sensitive method of analysis featuring high spectral and local resolution. A scanning electron microscope was used to determine what analytical information can be obtained from the spectra of, for example, GaAs: Si LEDs and under what conditions. Charge carrier densities of 5 multiplied by (times) 10**1**7 cm** minus **3 to 5 multiplied by (times) 10**1**8 cm** minus **3 were measured in weakly compensated GaAs to within an accuracy of a few percent, while for strongly compensated GaAs it was possible to form an estimate. This technique has proved very practical for the analysis of defect mechanisms in diodes.
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页码：236 / 244
页数：9
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