ENHANCEMENT OF EXCITONIC PHOTOLUMINESCENCE IN SILICON-DOPED n+/i-GaAs STRUCTURES

被引：4

作者：

Kazlauskaite, V. ^{[1
]}

Suziedelis, A. ^{[1
]}

Cerskus, A. ^{[1
]}

Gradauskas, J. ^{[1
]}

Asmontas, S. ^{[1
]}

Kundrotas, J. ^{[1
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2009年 / 49卷 / 03期

关键词：

GaAs homojunction; photoliuminescence; exciton; GAAS; SEMICONDUCTORS; DEPENDENCE;

D O I：

10.3952/lithjphys.49307

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present photoluminescence spectra of a molecular beam epitaxy grown GaAs structure consisting of the layer of intrinsic conductivity having 500 nm thickness and capped with silicon-doped 100 nm thick layer. The spectra were measured in the range of 3.6-77 K crystal lattice temperatures and at various laser excitation energies. Possible mechanisms of experimentally observed excitonic line narrowing and intensity enhancement in n(+)/i-GaAs homojunction are discussed.

引用

页码：285 / 290

页数：6

共 50 条

[21] Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra
G. B. Galiev
E. A. Klimov
S. S. Pushkarev
A. A. Zaytsev
A. N. Klochkov
Semiconductors, 2020, 54 : 1417 - 1423
[22] DISLOCATION PROFILES IN SILICON-DOPED GAAS SINGLE-CRYSTALS
MORAVEC, F
STEPANEK, B
SESTAKOVA, V
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 10 (03): : 217 - 218
[23] Terahertz photoconductive antennas based on silicon-doped GaAs (111)A
Klimov, Evgeniy
Klochkov, Aleksey
Solyankin, Petr
Pushkarev, Sergei
Galiev, Galib
Yuzeeva, Nataliya
Shkurinov, Aleksandr
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2024, 38 (28):
[24] RADIATIVE RECOMBINATION IN SILICON-DOPED P-TYPE GAAS
SUSHKOV, VP
LYUBYANI.EB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 1974 - &
[25] Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures
N. I. Podolska
P. B. Rodin
Semiconductors, 2019, 53 : 379 - 384
[26] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
KRESSEL, H
DUNSE, JU
NELSON, H
HAWRYLO, FZ
JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &
[27] SHIFT OF ELECTROLUMINESCENCE LINE EMITTED BY SILICON-DOPED GAAS INJECTION DIODES
RYABOKON, VN
SVIDZINS.KK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 952 - &
[28] Surface oxidation study of silicon-doped GaAs wafers by FTIR spectroscopy
Chang, RH
AlSheikhly, M
Christou, A
Varmazis, C
CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, 448 : 75 - 80
[29] THERMODYNAMIC ANALYSIS OF THE GROWTH OF SILICON-DOPED GAAS SINGLE-CRYSTALS
LEITNER, J
MORAVEC, F
JOURNAL OF CRYSTAL GROWTH, 1987, 83 (03) : 376 - 382
[30] MECHANISM OF RADIATIVE RECOMBINATION IN SILICON-DOPED GALLIUM ARSENIDE EPITAXIAL P-N STRUCTURES
ALFEROV, ZI
GARBUZOV, DZ
MOROZOV, EP
TRETYAKO.DN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (04): : 471 - &

← 1 2 3 4 5 →