Dynamic Self-Clamping at Short-Circuit Turn-Off of High-Voltage IGBTs

被引：0

作者：

Basler, Thomas ^{[1
]}

Bhojani, Riteshkumar ^{[1
]}

Lutz, Josef ^{[1
]}

Jakob, Roland ^{[2
]}

机构：

[1] Tech Univ Chemnitz, Chair Power Elect & EMC, Reichenhainer Str 70, D-09126 Chemnitz, Germany

[2] GE Energy, Power Convers, D-12277 Berlin, Germany

来源：

2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2013年

关键词：

RUGGEDNESS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements show that the IGBT is able to clamp the collector-emitter voltage to a certain value at short-circuit turn-off despite a very low gate turn-off resistor in combination with a high parasitic inductance is applied. The IGBT itself reduces the turn-off di(C) / dt by avalanche injection. However, device destructions during fast turn-off were observed which cannot be linked with an overvoltage failure mode. Measurements and semiconductor simulations of high-voltage IGBTs explain the self-clamping mechanism in detail. Possible failures which can be connected with filamentation processes are described. Options for improving the IGBT robustness during short-circuit turn-off are discussed.

引用

页码：277 / 280

页数：4

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