Modern high-voltage IGBTs and their turn-off performance

被引：0
|
作者：
Eckel, Hans-Guenter [1 ]
Bakran, Mark A. [1 ]
机构：
[1] Siemens A&D LD T D3, Vogelweiher Str 1-15, D-90441 Neuherberg, Germany
来源：
IECON 2006 - 32ND ANNUAL CONFERENCE ON IEEE INDUSTRIAL ELECTRONICS, VOLS 1-11 | 2006年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The standard circuit for inverters for electrical drive and energy applications is the voltage source inverter. The preferred semiconductor from the kW up to the MW range is the IGBT. For high power inverters, high voltage IGBT modules are used. High voltage IGBTs have a limited turn-off capability. The use of large size or paralleled IGBTs leads to large inductive voltage drops in the commutation circuits. In this paper, a simple model for the turn-off of high voltage IGBTs with long carrier lifetime is derived from the device physics. The turn-off stress for the IGBT and the influence of the gate drive on it are analyzed and the characteristic behavior of IGBTs with field stop layers is explained.
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页码：139 / +
页数：2
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